Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial
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Memoria materiales 2015
Ignacio Martin-Bragado - Academia.edu
madri+d. Entrevista a: Ignacio Martín Bragado
Libros y materiales gratuitos para enseñar y aprender: Libro de Física General, para secundaria. Pdf gratis
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Physical Modeling of Defects, Dopant Activation and Diffusion in Aggressively Scaled Bulk and SOI Devices: Atomistic and Continu
Ignacio MARTIN-BRAGADO | PhD in Physics
IWCE 2013 Book of Abstracts
PDF) Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation | Ignacio Martin-Bragado and Pedro Castrillo - Academia.edu
Thermostructural Behaviour of Ni-Cr Materials: Modelling Bulk and Nanoparticle Systems
madri+d: Lecturas particulares Ignacio Martín-Bragado
Physical modeling of Fermi-level effects for decanano device process simulations
Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon: Applied Physics Letters: Vol 98, No 15
Ignacio MARTIN-BRAGADO | PhD in Physics
arXiv:1608.00779v2 [cond-mat.mtrl-sci] 7 Aug 2016
Ignacio MARTIN-BRAGADO | PhD in Physics
Multiscale modeling of junction processing in FDSOI and FinFET devices for 10nm node technology and below
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Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films
