Multi-pass HGHG with a 300 nm-wavelength seed laser with a target final... | Download Scientific Diagram
Reduced threshold current density of GaN-based green laser diode by applying polarization doping <i>p</i>-cladding layer-中国光学期刊网
Micromachines | Free Full-Text | Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser